Zonal efficiency limit calculation for nano-structured solar cells
Identifieur interne : 003558 ( Main/Repository ); précédent : 003557; suivant : 003559Zonal efficiency limit calculation for nano-structured solar cells
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Abstract
We extend the well-known Shockley-Queisser detailed balance calculation for determining the efficiency limit of a solar cell to the case of strong local deviations of the optical power absorption as present in nano-structured photovoltaic devices. In addition, the simple assumption of perfect absorption of all incident light exceeding the bandgap is refined. We present a modified Shockley-Queisser efficiency limit calculation for nano-structured photovoltaic devices, it incorporates a rigorous wave optics calculation and spatially resolved generation of electron-hole pairs. We apply this method to core-shell single-junction InP nanowire array for the use in concentrator solar cells. We investigate the efficiency limits regarding the arrangement of the active regions within the wire. Our results indicate that in a nanowire array solar cell with low volume fill factor the efficiency limit can approach the values of planar thin-film devices. This observation indicates the occurrence of micro-concentration and underlines the necessity of a wave optics approach. The spatially and spectrally resolved analysis shows that generation on the surface of the nanowires is considerable, particularly with regard to high energy photons. Therefore, it is necessary to efficiently extract those carriers.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Zonal efficiency limit calculation for nano-structured solar cells</title><author><name sortKey="Kupec, Jan" uniqKey="Kupec J">Jan Kupec</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Integrated Systems Laboratory, ETH Zurich, Gloriastrasse 35</s1><s2>8092 Zurich</s2><s3>CHE</s3><sZ>1 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8092 Zurich</wicri:noRegion></affiliation></author><author><name>SHUQING YU</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Computational Electronics and Photonics Group, University of Kassel, Wilhelmshöher Allee 71</s1><s2>34121 Kassel</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Kassel</region><settlement type="city">Cassel (Hesse)</settlement></placeName></affiliation></author><author><name sortKey="Witzigmann, Bernd" uniqKey="Witzigmann B">Bernd Witzigmann</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Computational Electronics and Photonics Group, University of Kassel, Wilhelmshöher Allee 71</s1><s2>34121 Kassel</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Kassel</region><settlement type="city">Cassel (Hesse)</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0417232</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0417232 INIST</idno><idno type="RBID">Pascal:10-0417232</idno><idno type="wicri:Area/Main/Corpus">003E62</idno><idno type="wicri:Area/Main/Repository">003558</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compound</term><term>Electron hole pair</term><term>III-V semiconductors</term><term>Indium Phosphides</term><term>Nanowires</term><term>Solar cell</term><term>Thin film</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Paire électron trou</term><term>Cellule solaire</term><term>Couche mince</term><term>Composé binaire</term><term>Semiconducteur III-V</term><term>Indium Phosphure</term><term>Nanofil</term><term>In P</term><term>InP</term><term>0130C</term><term>8460J</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We extend the well-known Shockley-Queisser detailed balance calculation for determining the efficiency limit of a solar cell to the case of strong local deviations of the optical power absorption as present in nano-structured photovoltaic devices. In addition, the simple assumption of perfect absorption of all incident light exceeding the bandgap is refined. We present a modified Shockley-Queisser efficiency limit calculation for nano-structured photovoltaic devices, it incorporates a rigorous wave optics calculation and spatially resolved generation of electron-hole pairs. We apply this method to core-shell single-junction InP nanowire array for the use in concentrator solar cells. We investigate the efficiency limits regarding the arrangement of the active regions within the wire. Our results indicate that in a nanowire array solar cell with low volume fill factor the efficiency limit can approach the values of planar thin-film devices. This observation indicates the occurrence of micro-concentration and underlines the necessity of a wave optics approach. The spatially and spectrally resolved analysis shows that generation on the surface of the nanowires is considerable, particularly with regard to high energy photons. Therefore, it is necessary to efficiently extract those carriers.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA02 i1="01"><s0>PSISDG</s0></fA02><fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. 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All rights reserved.</s1></fA44><fA45><s0>19 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0417232</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We extend the well-known Shockley-Queisser detailed balance calculation for determining the efficiency limit of a solar cell to the case of strong local deviations of the optical power absorption as present in nano-structured photovoltaic devices. In addition, the simple assumption of perfect absorption of all incident light exceeding the bandgap is refined. We present a modified Shockley-Queisser efficiency limit calculation for nano-structured photovoltaic devices, it incorporates a rigorous wave optics calculation and spatially resolved generation of electron-hole pairs. We apply this method to core-shell single-junction InP nanowire array for the use in concentrator solar cells. We investigate the efficiency limits regarding the arrangement of the active regions within the wire. Our results indicate that in a nanowire array solar cell with low volume fill factor the efficiency limit can approach the values of planar thin-film devices. This observation indicates the occurrence of micro-concentration and underlines the necessity of a wave optics approach. The spatially and spectrally resolved analysis shows that generation on the surface of the nanowires is considerable, particularly with regard to high energy photons. 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